Capacitance microscope - メーカー・企業と業務用製品 | イプロスものづくり

[Analysis Case] SCM Analysis of SiC Planer Power MOS

You can visualize the diffusion layer structure of SiC devices.

In SCM, it is possible to identify the p/n polarity of semiconductors and visualize the shape of the diffusion layer. This method has been utilized for Si devices, but it can also be applied to SiC devices in areas where the carrier concentration is sufficiently high. This document presents the results of SCM analysis conducted on a cross-section of a SiC Planar Power MOS.